| Manufacturer | Part # | Datasheet | Description |
 KEC(Korea Electronics) |
KMA3D6N20SA
|
705Kb / 5P |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
|
 Alpha & Omega Semicondu... |
AOTF4126
|
428Kb / 7P |
fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge
|
 Bruckewell Technology L... |
MS45C41
|
963Kb / 8P |
Low rDS(on) trench technology
|
 Kersemi Electronic Co.,... |
KSMB3N60
|
660Kb / 4P |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
 First Silicon Co., Ltd |
FTK2306
|
408Kb / 4P |
low gate charge and operation with gate low gate charge and operation with gate
|
|
FTK2312
|
659Kb / 4P |
low gate charge and operation with gate voltages as low as 2.5V
|
 Shanghai Leiditech Elec... |
LMP0218G
|
1Mb / 6P |
Excellent gate charge x RDS(on) product(FOM)
|
 SHENZHEN DOINGTER SEMIC... |
SIA537EDJ
|
1Mb / 7P |
N-Channel and P-Channel MOSFET uses advanced trench technology To provide excellent RDS(ON)
|
 Shenzhen Luguang Electr... |
3400
|
1Mb / 6P |
The 3400 uses advanced trench technology to provide excellent RDS(ON)
|
|
3400L
|
1Mb / 6P |
The 3400L uses advanced trench technology to provide excellent RDS(ON)
|