DMN2005K

Document number: DS30734 Rev. 9 - 2

2 of 5

www.diodes.com

March 2017

© Diodes Incorporated

DMN2005K

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

10

V

Drain Current Per Element (Note 5)

Continuous

Pulsed (Note 6)

300

600

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

350

mW

Thermal Resistance, Junction to Ambient

357

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20





V

Zero Gate Voltage Drain Current





10

µA

Gate-Source Leakage





5

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.53





0.9

V

Static Drain-Source On-Resistance





0.55

0.



3.5

1.7

Ω

Forward Transfer Admittance

40





mS

Diode Forward Voltage



0.7



1.4



V

Notes:

5. Device mounted on FR-4 PCB.

6. Pulse width

10μS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

0

0.5

1.0

1.5

2.0

0

1

2

3

4

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 4.5V

GS

V

= 1.2V

GS

V

= 1.8V

GS

0

0.5

1.0

1.5

0

0.5

1

1.5

2

2.5

3

I

,

D

R

A

I

N

C

U

R

R

E

N

T

(

A

)

D

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A