DMN2005K

Document number: DS30734 Rev. 9 - 2

3 of 5

www.diodes.com

March 2017

© Diodes Incorporated

DMN2005K

0

0.2

0

0.4

0.8

1.2

1.6

2

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V

= 1.8V

GS

V

= 2.5V

GS

V

= 4.5V

GS

0.8

0.6

0.4

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (癈 )

J

0.6

0.8

1.0

1.2

1.4

1.6

V

= 2.5.V

I = 500mA

GS

D

V

= 4.5V

I = 1.0A

GS

D

0

0.2

0.4

0.6

0.8

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (癈 )

J

V

= 4.5V

I = 1.0A

GS

D

V

= 2.5V

I = 500mA

GS

D

0

0.4

0.8

1.2

1.6

0

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

0.2

I

,

S

O

U

R

C

E

C

U

R

R

E

N

T

(

A

)

S

T = 25°C

A

0

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

T

H

)

I = 250µA

D

I

= 1mA

D

0

0.2

0.4

0.6

0.8

0

0.4

0.8

1.2

1.6

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

D

S

(

O

N

)



T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

(

(