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DMN2065UWQ Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN2065UWQ
Description  20V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2065UWQ Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN2065UWQ
Document number: DS36988 Rev. 2 - 2
4 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMN2065UWQ
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (癈 )
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
4
8
12
16
20
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
10
100
1,000
C
oss
Crss
Ciss
f = 1MHz
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
12
15
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
f = 1MHz
0.1
1
10
100
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
R
Limited
DS(ON)
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
P
= 10µs
W
0
2
4
6
8
10
12
14
16
18
20
0.001
0.01
0.1
1
10
100
I
,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
(°C)



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