DMN2065UWQ

Document number: DS36988 Rev. 2 - 2

2 of 7

www.diodes.com

May 2017

© Diodes Incorporated

DMN2065UWQ

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Steady

State

2.8

2.3

A

t<10s

3.1

2.6

A

Steady

State

2.2

1.7

A

t<10s

2.4

1.9

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

30

A

Maximum Body Diode Forward Current (Note 6)

1.2

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

0.43

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

296

°C/W

t<10s

252

°C/W

Total Power Dissipation (Note 7)

0.7

W

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

178

°C/W

t<10s

151

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

20

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±1

μA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

0.35

—

1

V

Static Drain-Source On-Resistance

—

52

56

m

Ω

—

59

65

—

60

93

—

75

140

Forward Transfer Admittance

—

7

—

S

Diode Forward Voltage

—

0.7

1

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

400

—

pF

f = 1MHz

Output Capacitance

—

73.8

—

pF

Reverse Transfer Capacitance

—

65.6

—

pF

Total Gate Charge

—

5.4

—

nC

Gate-Source Charge

—

0.7

—

nC

Gate-Drain Charge

—

1.4

—

nC

Turn-On Delay Time

—

3.5

—

ns

Turn-On Rise Time

—

9.7

—

ns

Turn-Off Delay Time

—

23.8

—

ns

Turn-Off Fall Time

—

7.2

—

ns

Notes:

6. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.