DMN3150LW datasheet(2/5 Pages) DIODES

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DMN3150LW

Document number: DS31514 Rev. 2 - 2

2 of 5

www.diodes.com

January 2016

DMN3150LW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

VDSS

Gate-Source Voltage

VGSS

12

Drain Current (Note 5)

TA = +25°C

TA = +70°C

1.6

1.2

Drain Current (Note 5)

Pulsed

IDM

6.4

Body-Diode Continuous Current (Note 5)

1.5

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

350

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RJA

357

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 250A

Zero Gate Voltage Drain Current

IDSS



800

VDS = 28V, VGS = 0V

Gate-Body Leakage

IGSS



80

800

VGS = ±12V, VDS = 0V

VGS = ±19V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

VGS(TH)

0.62

0.94

1.4

VDS = VGS, ID = 250A

Static Drain-Source On-Resistance

RDS(ON)





115

138



VGS = 4.5V, ID = 1.6A

VGS = 2.5V, ID = 1.2A

Forward Transconductance

|Yfs|



5.4



VDS = 5V, ID = 2.7A

Source-Drain Diode Forward Voltage

VSD



1.16

VGS = 0V, IS = 1.5A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Ciss



305



VDS = 5V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



Notes:

5. Device mounted on 1in

2 FR-4 PCB on 2oz. Copper. t

≤ 10 sec.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

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