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AP9435K Datasheet(PDF) 2 Page - Advanced Power Technology

Part # AP9435K
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

AP9435K Datasheet(HTML) 2 Page - Advanced Power Technology

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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.02
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-5.3A
-
-
50
VGS=-4.5V, ID=-4.2A
-
-
100
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5.3A
-
10
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-24V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=-5.3A
-
9.2
16
nC
Qgs
Gate-Source Charge
VDS=-24V
-
2.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5.2
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
11
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
25
-
ns
tf
Fall Time
RD=15Ω
-17
-
ns
Ciss
Input Capacitance
VGS=0V
-
507
912
pF
Coss
Output Capacitance
VDS=-15V
-
222
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
158
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage
2
IS=-2.3A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5.3A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 120 ℃/W when mounted on Min. copper pad.
AP9435K
± 25V
±100



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