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AP9435K Datasheet(PDF) 3 Page - Advanced Power Technology |
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AP9435K Datasheet(HTML) 3 Page - Advanced Power Technology |
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3 / 4 page ![]() AP9435K Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 5 10 15 20 25 30 012 345 -V DS , Drain-to-Source Voltage (V) T A =25 o C -10V -8.0V -6.0V -5.0V V G =-4.0V 0 5 10 15 20 25 30 0123 4567 -V DS , Drain-to-Source Voltage (V) T A =150 o C -10V -8.0V -6.0V -5.0V V G =-4.0V 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C 0 1 2 3 4 -50 0 50 100 150 T j , Junction Temperature ( o C) 30 40 50 60 70 80 90 100 110 3456789 10 11 -V GS , Gate-to-Source Voltage (V) I D =5.3A T A =25 ℃ ℃ ℃ ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) V G =10V I D =-5.3A |
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