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DMN95H2D2HCTI Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN95H2D2HCTI
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN95H2D2HCTI Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN95H2D2HCTI
Document number: DS39275 Rev. 2 - 2
2 of 7
www.diodes.com
June 2017
© Diodes Incorporated
DMN95H2D2HCTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
950
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (Note 5)
VGS = 10V
TC = +25°C
TC = +100°C
ID
6
4
A
Pulsed Drain Current (Note 6)
IDM
24
A
L = 60mH
IAS
3.5
A
L = 60mH
EAS
360
mJ
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 5)
TC = +25°C
TC = +100°C
PD
40
14
W
Thermal Resistance, Junction to Case (Note 5)
TC = +25°C
RθJC
3.6
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
950
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 950V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
3
4
5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
1.7
2.2
Ω
VGS = 10V, ID = 3A
Diode Forward Voltage
VSD
0.85
1.2
V
VGS = 0V, IS = 6A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
1487
pF
VDS = 25V, f = 1MHz,
VGS = 0V
Output Capacitance
Coss
113
Reverse Transfer Capacitance
Crss
1
Gate Resistance
Rg

4.7

Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg

20.3

nC
VDD = 720V, ID = 6A,
VGS = 10V
Gate-Source Charge
Qgs
6.4
Gate-Drain Charge
Qgd
6.1
Turn-On Delay Time
tD(ON)
39
ns
VDD = 450V, VGS = 10V,
Rg = 25Ω, ID = 6A
Turn-On Rise Time
tR
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF


Body Diode Reverse Recovery Time
tRR
607
ns
IF = 6A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR


C
Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.



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