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DMPH3010LPS Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMPH3010LPS
Description  175C P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMPH3010LPS Datasheet(HTML) 3 Page - Diodes Incorporated

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DMPH3010LPS
Document number: DS37129 Rev. 1 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMPH3010LPS
POWERDI is a registered trademark of Diodes Incorporated
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = -5.0V
V
GS = -4.5V
V
GS =-4.0V
V
GS =2.2V
V
GS =2.5V
V
GS =-2.2V
V
GS =-2.5V
V
GS =-3.5V
V
GS =-3.0V
0.002
0.004
0.006
0.008
0.01
0.012
0
1
2
3
4
5
6
7
8
9
10
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = -10V
V
GS = -4.5V
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0.011
1
3
5
7
9 11 13 15 17 19 21 23 25 27 29
I
D, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS=-4.5V
25℃
85℃
150℃
125℃
175℃
-55℃
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2.Typical Transfer Characteristic
V
DS= -5.0V
175℃
150℃
125℃
-55℃
25℃
85℃
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0
5
10
15
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = -1.0A
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS=-4.5V, ID = -10A
V
GS=-10V, ID = -10A



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