IXTL2N470 datasheet(1/5 Pages) IXYS

Part #	IXTL2N470

Description	N-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

DS100759(11/16)

High Voltage

Power MOSFET

N-Channel Enhancement Mode

IXTL2N470

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

4700

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

4700

V

GSS

Continuous

20

V

GSM

Transient

30

V

I

D25

T

C = 25C2

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

8A

P

D

T

C = 25C

220

W

T

J

- 55 ... +150

C

T

JM

150

C

T

stg

- 55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

F

C

Mounting Force

20..120 / 4.5..27

N/lb.

V

ISOL

50/60Hz, 1 Minute

4000

V~

Weight

8

g

V

DSS

= 4700V

I

D25

= 2A

R

DS(on)



 20



G = Gate

S = Source

D = Drain

ISOPLUS i5-PakTM

G

S

D

Isolated

Tab

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

V

GS(th)

V

DS = VGS, ID = 250A

3.5

6.0

V

I

GSS

V

GS = 20V, VDS = 0V

200 nA

I

DSS

V

DS = 3.6kV, VGS = 0V

10

A

V

DS = 4.7kV

50 μA

V

DS = 3.6kV

Note 2, T

J = 125C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

20



Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate



Isolated Mounting Surface



4000V~ RMS Electrical Isolation



Molding Epoxies meet UL 94 V-0

Flammability Classification

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High Voltage Power Supplies



Capacitor Discharge Applications



Pulse Circuits



Laser and X-Ray Generation Systems

(Electrically Isolated Tab)

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