50-4000 MHz SILICON GERMANIUM Gain Block

BGS1

1

Rev. H

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2018 BeRex

UMTS, WCDMA, Wireless Data

BeRex’s BGS1 is a high SiGe HBT MMIC am-

plifier, internally matched to 50 Ohms with-

out the need for external components. De-

signed to run directly from a 3.2V supply.

The BGS1 is designed for high linearity 3.2V

gain block applications . It is packaged in a

RoHS-compliant with SOT-363 surface

Product Description

Device Features

• Driver Amplifier

• Cellular, PCS, GSM, UMTS, WCDMA

Applications

Applications Circuit

*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH

Typical Performance

1

Absolute Maximum Ratings

Min.

Typical

Max.

Unit

Bandwidth

70

4000

MHz

23

27

31

mA

3.2

V

dG/dT

0.003

dB/°C

130

°C/W

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +105

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

+150

Operating Voltage

V

+3.6

Supply Current

mA

100

Input RF Power

dBm

15

Operation of this device above any of these parameters may result in permanent damage.

**less than 56nH improves RF performance at over 0.9GHz.

*1uH or higher value L1 improves RF performance at under 900MHz.

*Optimum value of L1 may vary with board design.

BGS1

L1

C1

C3

C4

RFin

RFout

C5

+3.2

V

C2

*C1,C2=2000pF, L1=1uH for 70MHz application,

BG

S1

IN

GND

GND

OUT

GND

GND

Pin Description

RF IN

3

RF OUT

6

GND

1,2,4,5

Parameter

Frequency

Unit

70

900

1900

2450

2650

3500 MHz

Gain

23.6

22.2

19.2

17.3

16.2

14.9

dB

S11

-16.8

-31.3

-35.5

-18.3

-15.8

-11.4

dB

S22

-23

-17.1

-11.7

-12.6

-17

-15.3

dB

27.5

26

25.4

24

24

19.2

dBm

P1dB

15.9

16.7

14.9

12.6

12.4

9.9

dBm

N.F

3

2.9

3

3.3

3.5

3

dB

Application Circuit Values Example

Freq.

70~900MHz

900MHz ~ 3GHz

3GHz ~ 4GHz

C1/C2

2nF

100pF

10pF

L1

1uH

56nH

12nH

(1608 Chip Ind.)

*C1,C2=10pF, L1=12nH for 3.5GHz application,