2013. 5. 03

2/7

KF11N50P/F

Revision No : 1

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

500

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

A, Referenced to 25

℃

-

0.55

-

V/

℃

Drain Cut-off Current

-

-

10

μA

Gate Threshold Voltage

A

2.5

-

4.5

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

0.42

0.52

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

26

-

nC

Gate-Source Charge

-

6.5

-

Gate-Drain Charge

-

9.1

-

Turn-on Delay time

(Note4,5)

-

45

-

ns

Turn-on Rise time

-

35

-

Turn-off Delay time

-

100

-

Turn-off Fall time

-

35

-

Input Capacitance

-

1400

-

pF

Output Capacitance

-

170

-

Reverse Transfer Capacitance

-

12

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

11

A

Pulsed Source Current

-

-

44

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/

μs

-

360

-

ns

Reverse Recovery Charge

-

4.4

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤300μs, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

101

2

KF11N50

F

1

101

2

KF11N50

P

1

Marking