2013. 5. 03

1/7

SEMICONDUCTOR

TECHNICAL DATA

KF11N50P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 1

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

FEATURES

・V

・Drain-Source ON Resistance :

・Qg(typ.) = 26nC

MAXIMUM RATING (Tc=25

℃)

DIM

MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8

0.1

+

_

2.8

0.1

+

_

2.54

0.2

+

_

1.27

0.1

+

_

1.4

0.1

+

_

13.08

0.3

+

_

3.6

0.2

+

_

+

_

9.9

0.2

+

_

9.2

0.2

+

_

4.5

0.2

+

_

2.4

0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

L

E

I

I

O

C

H

NN

Q

D

Q

P

P

1. GATE

2. DRAIN

3. SOURCE

12

3

* : Drain current limited by maximum junction temperature.

G

D

S

TO-220IS (1)

A

A

B

C

C

D

D

E

E

F

G

H

H

1.47 MAX

1.47 MAX

J

K

L

M

L

N

NN

O

Q

R

R

12

3

M

DIM

MILLIMETERS

*Single Gauge Lead Frame

10.16

0.2

+

_

15.87

0.2

+

_

2.54

0.2

+

_

0.8

0.1

+

_

3.18

0.1

+

_

0.5

0.1

+

_

3.23

0.1

+

_

13.0

0.5

+

_

2.54

0.2

+

_

4.7

0.2

+

_

6.68

0.2

+

_

2.76

0.2

+

_

3.3

0.1

+

_

12.57

0.2

+

_

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF11N50P

KF11N50F

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Drain Current

11

11*

A

7

7*

Pulsed (Note1)

33

33*

Single Pulsed Avalanche Energy

(Note 2)

400

mJ

Repetitive Avalanche Energy

(Note 1)

6.6

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

178

46.3

W

Derate above 25

℃

1.43

0.37

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

0.7

2.7

℃/W

Thermal Resistance, Junction-to-

Ambient

62.5

62.5

℃/W

KF11N50F

KF11N50P

EQUIVALENT CIRCUIT