ISL9237

FN8723 Rev.5.00

Page 8 of 40

Nov 29, 2017

Trickle Charge Current Accuracy

Trickle, options 256mA and 512mA

-20

20

%

Trickle, option 128mA

-30

30

%

Fast Charge to Trickle Charge

Threshold

1.5

1.7

1.9

V

Trickle Charge to Fast Charge

Threshold Hysteresis

65

92

125

mV

IDEAL DIODE MODE

Entering Ideal Diode Mode VSYS

Voltage Threshold

BGATE off, VSYS falling

150

mV

Exiting Ideal Diode Mode Battery

Current Threshold

150

mA

BGATE Source

VSYS - BGATE = 2V

12

17

20

mA

BGATE Sink

BGATE - GND = 2V

4

6

10

mA

AMON/BMON

AMON Gain

17.91

V/V

AMON Accuracy

-2

2

%

-5.0

0.4

5.0

%

-10

1

10

%

-40

4

40

%

AMON Minimum Output Voltage

30

mV

BMON Gain

17.95

V/V

BMON Accuracy

-2.00

-0.15

2.00

%

-5.00

-0.68

5.00

%

-10.0

-1.3

10.0

%

-20.0

-2.2

20.0

%

BMON Minimum Output Voltage

30

mV

Discharging Current PROCHOT#

DCProchot = 0x1000H (4096mA)

4096

mA

-3

3

%

DCProchot = 0x0C00H (3072mA)

3072

mA

-5

5

%

AMON/BMON Source Resistance

5

Ω

AMON/BMON Sink Resistance

5

Ω

ACOK, PROCHOT#, OTGPG/CMOUT (OPEN-DRAIN)

Open-Drain Current

1

µA

BATGONE AND OTGEN

High-Level Input Voltage

0.9

V

Low-Level Input Voltage

0.4

V

Input Leakage Current

1

µA

PROCHOT#

PROCHOT# Debounce Time (Note 7)

Prochot# Debounce register Bit<1:0> = 11

1

ms

Prochot# Debounce register Bit<1:0> = 10

500

µs

noted. Boldface limits apply across the junction temperature range, -10°C to +125°C unless otherwise specified. (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX