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EL7584 Datasheet(PDF) 14 Page - Renesas Technology Corp |
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EL7584 Datasheet(HTML) 14 Page - Renesas Technology Corp |
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14 / 16 page ![]() EL7584 FN7317 Rev 2.00 Page 14 of 16 February 4, 2005 500kHz when reasonable currents are being drawn. (For lower load currents, the gain and hence bandwidth progressively decreases.) This means the active transconductance is: This high transconductance indicates why it is important to have a low ESR capacitor. If: • ESR * 3.14 > 1 then the capacitor will not force the gain to roll off below unity, and subsequent poles can affect stability. The recommended capacitor has an ESR of 10m , but to this must be added the resistance of the board trace between the capacitor and the VCOM pin, where the sense connection is made internally - therefore this should be kept short. Also ground resistance between the capacitor and the base of R2 must be kept to a minimum. These constraints should be considered when laying out the PCB. If the capacitor is increased above 1µF, stability is generally improved and short pulses of current will cause a smaller “perturbation” on the VCOM voltage. The speed of response of the amplifier is however degraded as its bandwidth is decreased. At capacitor values around 10µF, a subtle interaction with internal DC gain boost circuitry will decrease the phase margin and may give rise to some overshoot in the response. The amplifier will remain stable, though. Response to High Current Spikes The VCOM amplifier's output current is limited to 180mA. This limit level, which is roughly the same for sourcing and sinking, is included to maintain reliable operation of the part. It does not necessarily prevent a large temperature rise if the current is maintained. (In this case the whole chip may be shut down by the thermal trip to protect functionality.) If the display occasionally demands current pulses higher than this limit, the reservoir capacitor will provide the excess and the amplifier will top the reservoir capacitor back up once the pulse has stopped. This will happen on the µs time scale in practical systems and for pulses 2 or 3 times the current limit, the VCOM voltage will have settled again before the next line is processed. Power-Up Sequencing With the components shown in the application diagram the on-chip power-up sequencing operates as follows. When the EN pin is taken to logic 1, the following sequence is followed by on-chip functions: 1. The boost circuit and negative charge pumps are enabled. VBOOST rises at a rate set by the boost load capacitor, the external load, and the boost’s current limit (controlled by the SS pin input.) Similarly, VOFF falls in voltage determined by the load capacitor, the VOFF load, and the current capability of these negative charge pumps (which is rising as VBOOST and hence VDDN rises.) 2. When VBOOST reaches a voltage such that V(FBB)> 1.13V and VOFF first reaches its required regulation voltage, the VCOM regulator is enabled and VCOM rises at a rate determined by the VCOM load capacitor, the load on VCOM, and the current limit of the VCOM amplifier. 3. When VCOM rises to within 100mV of V(INC), an internal delay circuit triggers and, for VDDP = 12V, a default delay of approximately 3.5ms is introduced before the positive charge pump is then enabled. This delay can be increased externally by connecting a capacitor between DP and VSSP. A 1nF capacitor will typically increase the delay before VON becomes enabled to 80ms. The enabled states of the on-chip functions become independent of VBOOST, VOFF, VCOM, and VON once each is triggered. The chip may be reset by forcing EN to logic 0 and allowing sufficient time for the various supplies to discharge sufficiently before taking EN to 1 again. Over-Temperature Protection An internal temperature sensor continuously monitors the die temperature. In the event that die temperature exceeds the thermal trip point, the device will shut down and disable itself. The upper and lower trip points are typically set to 130°C and 90°C respectively. PCB Layout Guidelines Careful layout is critical in the successful operation of the application. The following layout guidelines are recommended to achieve optimum performance. 1. VREF and VDDB bypass capacitors should be placed next to the pins. 2. Place the boost converter diode and inductor close to the LX pins. 3. Place the boost converter output capacitor close to the PGND pins. 4. Locate feedback dividers close to their respected feedback pins to avoid switching noise coupling into the high impedance node. 5. Place the charge pump feedback resistor network after the diode and output capacitor node to avoid switching noise. 6. All low-side feedback resistors should be connected directly to VSSB. VSSB should be connected to the power ground at one point only. A demo board is available to illustrate the proper layout implementation. 2 1F 500kHz 3.14S = |
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