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HIN202E Datasheet(PDF) 13 Page - Renesas Technology Corp |
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HIN202E Datasheet(HTML) 13 Page - Renesas Technology Corp |
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13 / 23 page ![]() HIN202E, HIN206E, HIN207E, HIN208E, HIN211E, HIN213E, HIN232E FN4315 Rev 17.00 Page 13 of 23 September 14, 2015 Die Characteristics METALLIZATION: Type: Al Thickness: 10k Å 1kÅ SUBSTRATE POTENTIAL GND PASSIVATION: Type: Nitride over Silox Nitride Thickness: 8k Å Silox Thickness: 7k Å TRANSISTOR COUNT: 185 PROCESS: CMOS Metal Gate Metallization Mask Layout HIN232E PIN 1 C1+ PIN 2 V+ C1- PIN 7 PIN 17 VCC PIN 3 C2+ PIN 4 C2- PIN 5 V- PIN 6 T2IN PIN 11 T1IN PIN 12 R1OUT PIN 13 R1IN PIN 14 T1OUT PIN 15 GND PIN 16 T2OUT PIN 8 R2IN PIN 9 T3OUT PIN 10 R2OUT |
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