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FT29F010B Datasheet(PDF) 1 Page - Force Technologies Ltd |
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FT29F010B Datasheet(HTML) 1 Page - Force Technologies Ltd |
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1 / 30 page  FT29F010B 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with FT29F010 and FT29F010A device ■ High performance — 90 ns maximum access time ■ Low power consumption — 12 mA typical active read current — 30 mA typical program/erase current — <1 µA typical standby current ■ Flexible sector architecture — Eight 16 Kbyte sectors — Any combination of sectors can be erased — Supports full chip erase ■ Sector protection — Hardware-based feature that disables/re- enables program and erase operations in any combination of sectors — Sector protection/unprotection can be implemented using standard PROM programming equipment ■ Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated sector — Embedded Program algorithm automatically programs and verifies data at specified address ■ Erase Suspend/Resume — Supports reading data from a sector not being erased ■ Minimum 1 million erase cycles guaranteed per sector ■ 20-year data retention at 125 °C — Reliable operation for the life of the system ■ Package options — 32-pin LCC/CLCC — 32-pin FP/FFP — 32-pin CDIP/CSOJ ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection ■ Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion — 32-pin PLCC Rev 2 1/30 2014 |
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