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MMRF1007H Datasheet(PDF) 6 Page - NXP Semiconductors

Part # MMRF1007H
Description  RF Power Field Effect Transistors
PDF  17 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1007H Datasheet(HTML) 6 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
TYPICAL CHARACTERISTICS
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
30
Ciss
100
10
40
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
22
1
0
60
10
18
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 5. Power Gain and Drain Efficiency
versus Output Power
D
17
16
1000
10000
Gps
20
19
21
100
10
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
21.5
500
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain versus Output Power
700
800
900
1000
P3dB = 1182 W (60.7 dBm)
Actual
Ideal
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
17
25
10
20
19
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
100
18
IDQ = 6000 mA
1000
10000
1500 mA
150 mA
375 mA
750 mA
21
22
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
VDD =30 V
23
0
16
35 V
20
45 V
200
400
600
800
1000
1200
1400
50 V
40 V
18
Note: Each side of device measured separately.
20
22
600
P1dB = 1065 W (60.3 dBm)
3000 mA
22
17
19
21
IDQ = 150 mA, f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
45
40
65
20
25_C
35
25
55
50
Pin, INPUT POWER (dBm) PEAK
Figure 9. Output Power versus Input Power
30
40
60
45
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
16
23
24
VDD =50 Vdc
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
85_C
TC =--30_C
1300
1200
1100
21
20.5
20
19.5
19
18.5
18
1



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