STS8C5H30L

2/11

Table 3: Absolute Maximum ratings

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Table 4: Thermal Data

Table 5: On/Off

Table 6: Dynamic

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Symbol

Parameter

Value

Unit

N-CHANNEL

P-CHANNEL

30

V

30

V

Gate- source Voltage

± 16

± 16

V

Single Operating

84.2

A

Single Operating

6.4

3.1

A

Drain Current (pulsed)

32

16.8

A

1.6

2

W

W

Operating Junction Temperature

Storage Temperature

150

-55 to 150

°C

°C

Rthj-case

Thermal Resistance Junction-case Single Operating

Dual Operating

62.5

78

°C/W

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-source

Breakdown Voltage

n-ch

p-ch

30

30

V

Zero Gate Voltage

n-ch

p-ch

1

10

µA

µA

Gate-body Leakage

n-ch

p-ch

±100

±100

nA

nA

Gate Threshold Voltage

n-ch

p-ch

1

11.6

2.5

V

V

Static Drain-source On

Resistance

n-ch

p-ch

n-ch

p-ch

0.018

0.045

0.020

0.070

0.022

0.055

0.025

0.075

Ω

Ω

Ω

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Forward

Transconductance

n-ch

p-ch

8.5

10

S

S

Input Capacitance

n-ch

p-ch

857

1350

pF

pF

Output Capacitance

n-ch

p-ch

147

490

pF

pF

Reverse Transfer

Capacitance

n-ch

p-ch

20

130

pF

pF