S8C5H30L datasheet(3/11 Pages) STMICROELECTRONICS

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STS8C5H30L

ELECTRICAL CHARACTERISTICS(CONTINUED)

Table 7: Switching On

Table 8: Switching Off

Table 9: Source-Drain Diodef

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 15 V, ID = 4 A,

RG= 4.7 Ω, VGS = 4.5 V

P-CHANNEL

VDD = 15 V, ID = 2 A,

RG= 4.7 Ω, VGS = 4.5 V

(Resistive Load see, Figure 28)

n-ch

p-ch

n-ch

p-ch

14.5

Total Gate Charge

VDD= 24 V, ID= 8 A,

VGS= 5 V

P-CHANNEL

VDD = 24 V, ID = 4 A,

VGS = 5 V

(see, Figure 31)

n-ch

p-ch

12.5

Qgs

Gate-Source Charge

n-ch

p-ch

2.5

Qgd

Gate-Drain Charge

n-ch

p-ch

2.3

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

VDD = 15 V, ID = 4 A,

RG= 4.7 Ω, VGS = 4.5 V

P-CHANNEL

VDD = 15 V, ID = 2.5 A,

RG= 4.7 Ω, VGS = 4.5 V

(Resistive Load see, Figure 28)

n-ch

p-ch

n-ch

p-ch

125

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

n-ch

p-ch

ISDM (2)

Source-drain Current (pulsed)

n-ch

p-ch

VSD (1)

Forward On Voltage

ISD = 8 A, VGS = 0

ISD = 5 A, VGS = 0

n-ch

p-ch

1.5

1.2

trr

Reverse Recovery Time

ISD = 8 A, di/dt = 100 A/µs

VDD = 15V, Tj = 150°C

P-CHANNEL

ISD = 5 A, di/dt = 100 A/µs

VDD = 15V, Tj = 150°C

(see test circuit, Figure 29)

n-ch

p-ch

Qrr

Reverse Recovery Charge

n-ch

p-ch

5.7

IRRM

Reverse Recovery Current

n-ch

p-ch

0.76

1.6

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