MCD312-12IO1 datasheet(5/6 Pages) IXYS

5 / 6 page

MCD312-12io1

100 200 300 400 500

100

200

300

400

500

600

100

125

150

104

105

106

100

125

150

0.001

0.01

0.1

2000

4000

6000

8000

10000

200

400

600

800

500

1000

1500

2000

2500

3000

100 125 150

100

200

300

400

500

600

180 ° sin

120 °

60 °

30 °

C [°C]

t [s]

TSM

[A]

T(AV)M

[A]

2dt

2s]

t [ms]

T(AV)M [A]

tot

[W]

A [°C]

tot

[W]

DAVM [A]

A [°C]

Fig. 1 Surge overload current

TSM:Crest value, t: duration

Fig. 2 I

2dt versus time

Fig. 3 Max. forward current

at case temperature

Fig. 4 Power dissipation versus on-state current and

ambient temperature (per thyristor)

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature

VJ = 45°C

VJ = 140°C

R = 0 V

180 ° sin

120 °

60 °

30 °

0.6

0.8

0.1

0.2

0.3

0.4

thKA K/W

0.06

3xMCC312 or

3xMCD312

Circuit

0.2

0.15

0.1

0.07

0.04

0.02

0.3

thKA K/W

limit

typ.

[V]

10-3

10-2

10-1

100

101

102

0.1

0.01

0.1

100

4: P

GM = 20 W

5: P

GM = 60 W

6: P

GM = 120 W

G [A]

[µs]

G [A]

Fig. 5 Gate voltage & gate current

Fig. 7 Gate controlled delay time t

VJ = 25°C

80 % V

RRM

TVJ = 45°C

50 Hz

VJ = 140°C

, TVJ = 140°C

3: I

GT, TVJ = -40°C

2: I

GT, TVJ =

25°C

1: I

, TVJ = 140°C

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20170116e

Data according to IEC 60747and per semiconductor unless otherwise specified

MCD312-12IO1 Datasheet(PDF) 5 Page - IXYS Corporation

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