AFT09MP055N datasheet(4/21 Pages) NXP

4 / 21 page

RF Device Data

Freescale Semiconductor, Inc.

AFT09MP055NR1 AFT09MP055GNR1

TYPICAL CHARACTERISTICS

250

109

108

107

105

110

130

150

170

190

210

230

106

1000

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain--Source Voltage

100

Figure 3. Drain Current versus Drain--Source Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. MTTF versus Junction Temperature -- CW

Note:

MTTF value represents the total cumulative operating time

under indicated test conditions.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

VDD = 12.5 Vdc

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

VGS =3.75 Vdc

3.5 Vdc

TA =25°C

510

Coss

Crss

Measured with ±30 mV (rms ) ac

@1 MHz, VGS =0 Vdc

3.25 Vdc

3Vdc

2.5 Vdc

7.71 Amps

ID =5.13 Amps

6.41 Amps

105

104

Ciss

Note: Each side of device measured separately.

Ciss value includes input matching network.

Note: Measured with both sides of the transistor

tied together.

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