M58BW032BT datasheet(32/60 Pages) STMICROELECTRONICS

Part #	M58BW032BT

Description	32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory

PDF	60 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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32 / 60 page

M58BW032BT, M58BW032BB, M58BW032DT, M58BW032DB

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Table 15. DC Characteristics

Note: 1. The Standby mode can be disabled by setting the Standby Disable bit (M14) of the Burst Configuration Register to ‘1’.

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VDDQ

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤VDDQ

±5

µA

IDD

(1)

Supply Current (Random Read)

E = VIL, G = VIH, fadd = 6MHz

IDDB

(1)

Supply Current (Burst Read)

E = VIL, G = VIH, fclock =

75MHz

IDD1

(1)

Supply Current (Standby)

E = RP = VDD ± 0.2V

100

µA

IDD2

(1)

Supply Current (Program or Erase)

Program, Erase in progress

IDD3

(1)

Supply Current

(Erase/Program Suspend)

E = VIH

µA

VIL

Input Low Voltage

–0.5

0.2VDDQIN

VIH

Input High Voltage (for DQ lines)

0.8VDDQIN

VDDQ +0.3

VIH

Input High Voltage (for Input only

lines)

0.8VDDQIN

3.6

VOL

Output Low Voltage

IOL = 100µA

0.1

VOH

Output High Voltage CMOS

IOH = –100µA

VDDQ –0.1

VLKO

VDD Supply Voltage (Erase and

Program lockout)

2.2

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