MDF9N50F datasheet(4/6 Pages) MGCHIP

4 / 6 page

Jun 2018. Version 1.1

MagnaChip Semiconductor Ltd.

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Case

Temperature

Fig.11 Transient Thermal Response Curve

Fig.12 Single Pulse Maximum Power

Dissipation

100

125

150

C, Case Temperature [

℃]

1E-5

1E-4

1E-3

0.01

0.1

1000

2000

3000

4000

single Pulse

thJC = 3.3

℃/W

C = 25

℃

Pulse Width (s)

-5

-4

-3

-2

-1

※ Notes :

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Z

θ JC* Rθ JC(t) + TC

Θ JC=3.3℃/W

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Rectangular Pulse Duration [sec]

400V

250V

100V

※ Note : I

D = 8.0A

G, Total Gate Charge [nC]

500

1000

1500

2000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

-1

-2

-1

10 s

100 s

100 ms

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

J=Max rated

C=25

℃

DS, Drain-Source Voltage [V]

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