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ESDA18-1F2 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDA18-1F2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() ESDA18-1F2 2/7 Table 2: Absolute Ratings (limiting value, per diode) Table 3: Electrical Characteristics (Tamb = 25°C) Symbol Parameter and test conditions Value Unit PPP Peak pulse power dissipation 10 / 1000 µs pulse Tj initial = Tamb 100 W Peak pulse power dissipation 8 / 20 µs pulse 700 IFSM Non repetitive surge peak forward current tp=10 ms Tj initial = Tamb 8A Tj Maximum operating junction temperature 125 °C Tstg Storage temperature range - 65 to + 175 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current C Capacitance Part Number VBR IR IRM VRM VCL IPP (1) VF (2) αTC min. max. max. max. max. max. typ. IF = 850mA VR=0V VV mA µA VVA V 10-4/°C pF ESDA18-1F2 16 18 1 0.5 10 20 1 1.3 8.5 230 (1) 8 / 20 µs pulse waveform. (2) DC current not recommended for more than 5 sec. Even if Transil failure mode is short circuit the bumps could exceed melting temper- ature and the component disassembled from the board. V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd |
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