D5V0M2B3LP

Document number: DS37881 Rev. 2 - 2

2 of 4

www.diodes.com

February 2016

© Diodes Incorporated

D5V0M2B3LP

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

130

W

8/20

μs, per Figure 1

Peak Pulse Current

12

A

8/20

μs, per Figure 1

ESD Protection

– Contact Discharge

±30

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

5

V

—

Channel Leakage Current (Note 6)

—

5

100

nA

Clamping Voltage, Positive Transients

—

—

10

V

—

—

14

Breakdown Voltage

5.5

—

9.5

V

Differential Resistance

—

0.3

—

Ω

Channel Input Capacitance

—

28

32

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website

at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

t, TIME (µs)

Figure 1 Pulse Waveform

20

40

60

100

50

0

Half Value I

/2

pp

8x20 Waveform

as defined by R.E.A.

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200