ACE1933B

N-Channel MOSFET

VER 1.1

2

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

ON/OFF Characteristics

Drain-source breakdown voltage

20

V

Zero gate voltage drain current

1

µA

Gate threshold voltage

0.4

0.7

1.0

V

Gate leakage current

±1

µA

Drain-source on-state resistance

3000

mΩ

6000

Diode forward voltage

1

V

Maximum body-diode continuous

current

0.2

A

Dynamic Characteristics

Input capacitance

Ciss

f=1.0MHz

23

50

pF

Output capacitance

Coss

7.7

25

Reverse transfer capacitance

Crss

5.8

12

Note :

1.

Pulse width limited by maximum junction temperature.

2.

Pulse test: PW

≤300μ s, duty cycle≤2%.

3.

For design AID only, not subject to production testing.

4.

Switching time is essentiallyindependent of operating temperature.