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ACE1933B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1933B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE1933B N-Channel MOSFET VER 1.1 1 Description The ACE1933B uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 1.8v. This device is suitable for use as a high switching applications. Features V DS=20V I D=0.15A (VGS=10V) R DS(ON) ≤ 3 mΩ @ V GS=4.5V R DS(ON) ≤ 6 mΩ@ V GS=1.8V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Continuous) TA=25℃ ID 0.15 A TA=70℃ 0.12 Drain Current (Pulsed) IDM 0.8 A Power Dissipation TA=25℃ PD 0.3 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3 Ordering information ACE1933B XX + H SOT-23-3 Description Function 1 G Gate 2 S Source 3 D Drain BM : SOT23-3 Pb - free Halogen - free |
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