SFS4936
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
30
-
-
V
Δ
BVDSS/
Δ
TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-29
-
mV/°C
IDSS
Drain-Source Leakage Current
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55 °C
--
1
25
uA
IGSS
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
100
nA
Gate-Source Leakage, Reverse
VGS = -20V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
1.0
-
3.0
V
RDS(ON)
Static Drain-Source On-state
Resistance
VGS = 10 V, ID = 5.8A
VGS = 4.5 V, ID = 4.7A
-
-
0.027
0.037
0.035
0.053
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VGS =0 V, VDS =15V, f = 1MHz
-600
-
pF
Coss
Output Capacitance
-
295
-
Crss
Reverse Transfer Capacitance
-
90
-
Dynamic Characteristics
td(on)
Turn-on Delay Time
VDD =15V, ID =1A, RG =50Ω
(Note 2,3)
-9
28
ns
tr
Rise Time
-
10
30
td(off)
Turn-off Delay Time
-
85
180
tf
Fall Time
-
40
90
Qg
Total Gate Charge
VDS =15V, VGS =10V, ID =5.8A
(Note 2,3)
-20
26
nC
Qgs
Gate-Source Charge
-
2.3
-
Qgd
Gate-Drain Charge(Miller Charge)
-
5
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
IS
Maximum Continuous Diode Forward Current
-
-
1.7
A
VSD
Diode Forward Voltage
IS =1.7A, VGS =0V
(Note 2)
--
1.2
V
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
4. Surface mounted on 1 inch2 Cu board.
2/6
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