PA010BV datasheet(1/4 Pages) NIKOSEM

Part #	PA010BV

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1

D-49-4

N-Channel Enhancement Mode

Field Effect Transistor

PA010BV

SOP-8

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

3

A

TA = 70 °C

2.2

Pulsed Drain Current

1

IDM

15

Avalanche Current

IAS

6

Avalanche Energy

L = 1mH

EAS

18

mJ

Power Dissipation

TA = 25 °C

PD

1.8

W

TA = 70 °C

1.2

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RJA

69

°C / W

Junction-to-Case

RJC

25

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

.ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

100

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.8

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 80V, VGS = 0V

1

A

VDS = 80V, VGS = 0V, TJ = 125 °C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 4.5V, ID = 3A

84

120

mΩ

VGS =10V, ID = 3A

79

100

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

100V

100mΩ

3A

G: GATE

D: DRAIN

S: SOURCE

G

D

S

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PA010BV Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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