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PA010BV Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # PA010BV
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PA010BV Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

  PA010BV Datasheet HTML 1Page - NIKO SEMICONDUCTOR CO., LTD. PA010BV Datasheet HTML 2Page - NIKO SEMICONDUCTOR CO., LTD. PA010BV Datasheet HTML 3Page - NIKO SEMICONDUCTOR CO., LTD. PA010BV Datasheet HTML 4Page - NIKO SEMICONDUCTOR CO., LTD.  
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2
D-49-4
N-Channel Enhancement Mode
Field Effect Transistor
PA010BV
SOP-8
Halogen-Free & Lead-Free
NIKO-SEM
REV 1.0
Forward Transconductance
1
gfs
VDS = 5V, ID = 3A
18
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
570
pF
Output Capacitance
Coss
50
Reverse Transfer Capacitance
Crss
30
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
1.3
Ω
Total Gate Charge
2
Qg
VDS = 50V , VGS = 10V,
ID =3A
13.6
nC
Gate-Source Charge
2
Qgs
2.1
Gate-Drain Charge
2
Qgd
4.8
Turn-On Delay Time
2
td(on)
VDS = 50V ,
ID  3A, VGS = 10V, RGEN =6Ω
15
nS
Rise Time
2
tr
5
Turn-Off Delay Time
2
td(off)
36
Fall Time
2
tf
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.3
A
Forward Voltage
1
VSD
IF = 3A, VGS = 0V
1.4
V
Diode Reverse Recovery Time
trr
IF=3A, dI/dt=100A/μs
22
nS
Diode Reverse Recovery Charge
Qrr
15
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2%.
2Independent of operating temperature.



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