PD5P8BA datasheet(1/4 Pages) NIKOSEM

Part #	PD5P8BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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REV1.0

1

H-44-2

N-Channel Enhancement Mode

Field Effect Transistor

PD5P8BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

G

D

S

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

TC = 25 °C

ID

34

A

TC = 100 °C

21

Pulsed Drain Current

1

IDM

70

Avalanche Current

IAS

17.8

Avalanche Energy

L = 0.1mH

EAS

15.8

mJ

Power Dissipation

TC = 25 °C

PD

25

W

TC = 100 °C

10

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

5

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

20V

12mΩ

34A

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PD5P8BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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