PD5P8BA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.0

H-44-2

N-Channel Enhancement Mode

Field Effect Transistor

PD5P8BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

0.45

0.8

1.25

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 16V, VGS = 0V

A

VDS = 10V, VGS = 0V, TJ = 125 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V , ID = 20A

7.9

mΩ

VGS = 4.5V, ID = 18A

9.3

VGS = 2.5V, ID = 9A

13.4

Forward Transconductance

gfs

VDS = 5V, ID = 20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 10V, f = 1MHz

718

Output Capacitance

Coss

149

Reverse Transfer Capacitance

Crss

122

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

2.2

Total Gate Charge

Qg(VGS=10V)

VDS = 10V , ID = 20A

Qg(VGS=4.5V)

Gate-Source Charge

Qgs

1.1

Gate-Drain Charge

Qgd

4.3

Turn-On Delay Time

td(on)

VDS = 10V

ID  20A, VGS = 10V, RGEN =6Ω

8.8

Rise Time

112

Turn-Off Delay Time

td(off)

Fall Time

132

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 10A, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = 10A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

3.1

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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