PE810BA datasheet(1/6 Pages) NIKOSEM

Part #	PE810BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 6 page

REV1.0

1

J-3-1

N-Channel Enhancement Mode

Field Effect Transistor

PE810BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

G

D

S

100% UIS Tested

100% Rg Tested

G

S

#1

D

D D

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

4

TC = 25 °C

ID

75

A

TC = 100 °C

47

Pulsed Drain Current

1

IDM

130

Continuous Drain Current

4

TA = 25 °C

ID

22

TA = 70 °C

17

Avalanche Current

IAS

37

Avalanche Energy

L = 0.1mH

EAS

68.4

mJ

Power Dissipation

TC = 25 °C

PD

37

W

TC = 100 °C

15

Power Dissipation

3

TA = 25 °C

PD

3.2

W

TA = 70 °C

2.1

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

G. GATE

D. DRAIN

S. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

3.7mΩ

75A

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PE810BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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