PE810BA datasheet(2/6 Pages) NIKOSEM

2 / 6 page

REV1.0

J-3-1

N-Channel Enhancement Mode

Field Effect Transistor

PE810BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

t ≦10s

RJA

°C / W

Junction-to-Ambient

Steady-State

RJA

Junction-to-Case

Steady-State

RJC

3.3

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

4Package limitation current is 33A.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.9

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 30V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 13A

3.6

mΩ

VGS = 10V, ID = 13A

2.9

3.7

Forward Transconductance

gfs

VDS = 5V, ID = 13A

72.5

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

2214

Output Capacitance

Coss

814

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

0.78

Total Gate Charge

VGS = 10V

VDS = 15V , VGS = 10V,

ID = 13A

VGS = 4.5V

Gate-Source Charge

Qgs

5.8

Gate-Drain Charge

Qgd

8.2

Turn-On Delay Time

td(on)

VDS = 15V ,

ID  13A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

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