PV548BA datasheet(1/4 Pages) NIKOSEM

Part #	PV548BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

Logo

1 / 4 page

1

E-4-2

N-Channel Enhancement Mode

Field Effect Transistor

PV548BA

SOP-8

Halogen-Free & Lead-Free

NIKO-SEM

REV1.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

14

A

TA = 70 °C

11

Pulsed Drain Current

1

IDM

150

Avalanche Current

IAS

36.3

Avalanche Energy

L = 0.1mH

EAS

65.9

mJ

Power Dissipation

TA = 25 °C

PD

1.9

W

TA = 70 °C

1.2

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RJA

65

°C / W

Junction-to-Case

RJC

25

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25° C.

.ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1

1.6

3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 70 °C

10

Drain-Source On-State

Resistance1

RDS(ON)

VGS = 4.5V, ID = 14A

5

7.2

mΩ

VGS =10V, ID = 14A

4.4

5.6

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

5.6mΩ

14A

G: GATE

D: DRAIN

S: SOURCE

G

D

S

Similar Part No. - PV548BA

Manufacturer	Part #	Datasheet	Description
Wuxi U-NIKC Semiconduct...	PV548BA	466Kb / 5P	N-Channel Enhancement Mode MOSFET

More results

Similar Description - PV548BA

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

PV548BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

PV548BA Datasheet(HTML) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

Similar Part No. - PV548BA

Similar Description - PV548BA

Html Pages

1 2 3 4

Datasheet Download

Link URL