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PV548BA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # PV548BA
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PV548BA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

  PV548BA Datasheet HTML 1Page - NIKO SEMICONDUCTOR CO., LTD. PV548BA Datasheet HTML 2Page - NIKO SEMICONDUCTOR CO., LTD. PV548BA Datasheet HTML 3Page - NIKO SEMICONDUCTOR CO., LTD. PV548BA Datasheet HTML 4Page - NIKO SEMICONDUCTOR CO., LTD.  
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2
E-4-2
N-Channel Enhancement Mode
Field Effect Transistor
PV548BA
SOP-8
Halogen-Free & Lead-Free
NIKO-SEM
REV1.0
Forward Transconductance
1
gfs
VDS = 5V, ID = 14A
80
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 15V, f = 1MHz
2280
pF
Output Capacitance
Coss
343
Reverse Transfer Capacitance
Crss
289
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
0.9
Ω
Total Gate Charge
2
Qg(VGS=10V)
VDS = 15V , ID =14A
54.4
nC
Qg(VGS=4.5V)
28.8
Gate-Source Charge
2
Qgs
6.5
Gate-Drain Charge
2
Qgd
14.2
Turn-On Delay Time
2
td(on)
VDS = 15V ,
ID  14A, VGS = 10V, RGEN =6Ω
24
nS
Rise Time
2
tr
16
Turn-Off Delay Time
2
td(off)
63
Fall Time
2
tf
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.9
A
Forward Voltage
1
VSD
IF = 14A, VGS = 0V
1
V
Diode Reverse Recovery Time
trr
IF= 14A, dI/dt=100A/μs
26
nS
Diode Reverse Recovery Charge
Qrr
13
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2%.
2Independent of operating temperature.



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