EMB50P03JS datasheet(3/5 Pages) EXCELLIANCE

Part #	EMB50P03JS

Description	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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3 / 5 page

2015/10/29

p.3

EMB50P03JS

T ‐Junction Temperature( C )

On‐Resistance Variation with Temperature

0.6

‐50

0.8

1.0

‐25

I = ‐4A

V = ‐10V

1.2

1.4

1.6

100

150

125

‐V ,Gate‐Source Voltage( V )

Transfer Characteristics

V = ‐10V

25 C

T = ‐55 C

125 C

25 C

with Source Current and Temperature

Body Diode Forward Voltage Variation

‐V ‐ Body Diode Forward Voltage( V )

0.1

0.0001

0.001

0.01

0.4

0.2

0.6

V =0V

100

T = 125 C

1.2

0.8

1.0

‐55 C

1.4

T = 25 C

with Gate‐Source Voltage

‐V ‐ Gate‐Source Voltage( V )

On‐Resistance Variation

0.04

0.08

0.12

0.16

I = ‐3A

T = 125 C

Drain Current and Gate Voltage

‐I ‐ Drain Current( A )

On‐Resistance Variation with

0.8

1.2

1.0

1.4

V = ‐4.5V

2.2

1.8

1.6

2.0

2.4

‐7.0V

912

‐8.0V

‐10V

‐6.0V

‐7.0V

‐V Drain‐Source Voltage( V )

On‐Region Characteristics

V = ‐10V

‐8.0V

‐4.5V

‐6.0V

TYPICAL CHARACTERISTICS

EMB50P03JS Datasheet(PDF) 3 Page - Excelliance MOS Corp.

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