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EMB50P03JS Datasheet(PDF) 4 Page - Excelliance MOS Corp.

Part # EMB50P03JS
Description  P?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMB50P03JS Datasheet(HTML) 4 Page - Excelliance MOS Corp.

  EMB50P03JS Datasheet HTML 1Page - Excelliance MOS Corp. EMB50P03JS Datasheet HTML 2Page - Excelliance MOS Corp. EMB50P03JS Datasheet HTML 3Page - Excelliance MOS Corp. EMB50P03JS Datasheet HTML 4Page - Excelliance MOS Corp. EMB50P03JS Datasheet HTML 5Page - Excelliance MOS Corp.  
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2015/10/29 
p.4 
EMB50P03JS
‐V   ,Drain‐Source Voltage( V )
Maximum Safe Operation Area
R    = 100 C/W
JA
T  = 25 C
SINGLE PULSE
GS
V   = ‐10V
0.01
0.1
A
0.1
θ
°
DS
1
°
DS(ON)
R       LIMIT
1
10
100
10
DC
50
10ms
10s
1s
100ms
μ
100   s
1ms
Single Pulse Time( SEC )
Single Pulse Maximum Power Dissipation
0.01
5
0
10
0.1
1
25
15
20
30
300
100
10
T  = 25 C
R    = 100 C/W
SINGLE PULSE
JA
A
θ
°
°
t1 , Time( ms ) 
0.1
Transient Thermal Response Curve
0.01
0.02
0.001
0.0001
0.01
0.001
0.01
SINGLE PULSE
0.05
0.1
0.2
D=0.5
0.1
1
*
R    (t)= r(t) R
A
Duty Cycle,D= t1  / t2
T ‐ T  = P  R     (t)
t2
R     = 100 C/W
110
t1
P(pk)
θ
θ
JA
JA
1000
100
JA
*
θ
JA
°
θ
j
Capacitance Characteristics
‐V    Drain‐Source Voltage( V )
0
0
300
150
450
DS
5
10
1050
750
600
900
1200
25
15
20
Crss
Coss
30
Ciss
V   = 0V
GS
f = 1MHZ
Q   ,Gate Charge( nC )
Gate Charge Characteristics
0
0
2
4
2
g
4
I   = ‐4A
6
8
D
10
10
8
6
12
‐15V
‐10V
V    = ‐5V
DS
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 



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