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EMB55A03G Datasheet(PDF) 4 Page - Excelliance MOS Corp.

Part # EMB55A03G
Description  Dual N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMB55A03G Datasheet(HTML) 4 Page - Excelliance MOS Corp.

  EMB55A03G Datasheet HTML 1Page - Excelliance MOS Corp. EMB55A03G Datasheet HTML 2Page - Excelliance MOS Corp. EMB55A03G Datasheet HTML 3Page - Excelliance MOS Corp. EMB55A03G Datasheet HTML 4Page - Excelliance MOS Corp. EMB55A03G Datasheet HTML 5Page - Excelliance MOS Corp.  
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2013/8/30 
p.4 
EMB55A03G
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
0.8
1.2
1
1.5
1.4
0.7
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature(°C)
ID
= 4.5A
VGS= 10V
On‐Resistance Variation with Temperature
0.9
1.1
1.3
10
1
0.01
0.001
0.0001
00.2
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage( V )
Body Diode Forward Voltage Variation with
Source Current and Temperature
VGS= 0V
TJ= 125°C
25°C
-55°C
0.1
100
10
8
6
4
2
0
01
2
3
4
VGS= 10V
6.0V
4.5V
VDS, Drain‐Source Voltage( V )
 On‐Region Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
02
4
6
8
10
VGS= 4.5V
5.0V
6.0V
7.0V
10V
ID, Drain Current( A )
 On‐Resistance Variation with
 Drain Current and Gate Voltage
0.25
0.20
0.10
0.15
0.05
0
0
2.5
5
7.5
10
VGS, Gate‐Source Voltage( V )
On‐Resistance Variation with Gate‐Source Voltage
ID=3A
TA= 125°C
TA= 25°C
0
2
4
6
8
10
6
5
4
3
2
1
VGS, Gate‐Source Voltage( V )
VDS= 5V
TA= -55°C
125°C
25°C
Transfer  Characteristics



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