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WNM3003 Datasheet(PDF) 4 Page - Will Semiconductor Ltd. |
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WNM3003 Datasheet(HTML) 4 Page - Will Semiconductor Ltd. |
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4 / 7 page ![]() WNM3003 Typical Characteristics (Ta=25 oC, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature 2 468 10 0 10 20 30 40 50 60 V GS =10V V GS =4.5V I DS -Drain-to-Source Current(A) 2 468 10 20 40 60 80 100 V GS -Gate-to-Source Voltage(V) I D =3.1A 012345 0 5 10 15 V DS =5V V GS -Gate-to-Source Voltage(V) -50 0C 0123 4 0 5 10 15 20 25 0C 125 0C V GS =2V V GS =3V V GS =4V V GS =4.5V V GS =10V V DS -Drain-to-Source Voltage(V) -50 0 50 100 150 10 20 30 40 50 60 V GS =10V I D =3.1A Temperature( 0C) -50 -25 0 25 50 75 100 125 150 1.0 1.2 1.4 1.6 1.8 2.0 I DS =250uA Temperature( 0C) Will Semiconductor Ltd. 4 2011 - Rev.1.1 Dec, |
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