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WNM3003 Datasheet(PDF) 5 Page - Will Semiconductor Ltd. |
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WNM3003 Datasheet(HTML) 5 Page - Will Semiconductor Ltd. |
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5 / 7 page ![]() WNM3003 Capacitance Body diode forward voltage Gate Charge Characteristics 0369 12 15 0 2 4 6 8 10 12 14 Q g (nC) V DS =15V,I D =3.1A Single pulse power 0.01 0 1 10 12 4 6 100 600 0.1 Time (sec) 2 8 10 TA = 25_C Safe operating area 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited by RDS(on) BVDSS Limited 1ms 100 μs 10 ms 1s,10s DC VDS - Drain-to-Source Voltage (V) 0 4 8 12 16 20 0 200 400 600 800 1000 0.00.20.40.60.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V GS =0,f=1MHZ V DS Drain-to-Source Voltage (V) C iss V sd -Source-to-Drain Voltage(V) C oss 25 0C C rss 150 0C Will Semiconductor Ltd. 5 2011 - Rev.1.1 Dec, |
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