GTVA212701FA-V2-R2 datasheet(3/8 Pages) CREE

Part #	GTVA212701FA-V2-R2

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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3 / 8 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 04.1, 2019-01-28

GTVA212701FA

-70

-60

-50

-40

-30

-20

-10

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

ACPU

ACPL

Efficiency

g212701fa-gr2

1950

2050

2150

2250

2350

Frequency (MHz)

Single-carrier WCDMA Broadband

VDD = 48 V, IDQ = 320 mA,

POUT = 47.5 dBm

3GPP WCDMA signal, 10 dB PAR

Gain

Efficiency

g212701fa-gr3

-35

-30

-25

-20

-15

-10

-5

-40

-35

-30

-25

-20

-15

-10

1950

2050

2150

2250

2350

Frequency (MHz)

Single-carrier WCDMA Broadband

VDD = 48 V, IDQ = 320 mA,

POUT = 47.5 dBm

3GPP WCDMA signal, 10 dB PAR

ACPU

ACPL

IRL

g212701fa-gr4

Output Power (dBm)

CW Performance Across Frequency

VDD = 48 V, IDQ = 320 mA

2170 MHz

2110 MHz

2140 MHz

Gain

Efficiency

g212701fa-gr5

Typical Performance (data taken in Wolfspeed production test fixture)

GTVA212701FA-V2-R2 Datasheet(PDF) 3 Page - Cree, Inc

GTVA212701FA-V2-R2 Datasheet(HTML) 3 Page - Cree, Inc

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