GD5F2GQ4RFZIH datasheet(4/47 Pages) GIGADEVICE

4 / 47 page

SPI(x1/x2/x4) NAND Flash

FEATURE

◆

2Gb SLC NAND Flash

◆

Program/Erase/Read Speed

- Page Program time: 400us typical

◆

Page Size

- Block Erase time: 3ms typical

- 2048 bytes + 64 bytes

- Page read time: 80us maximum(w/I ECC)

◆

Standard, Dual, Quad SPI

◆ Reliability

- Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#

- Endurance: 100K program/erase cycles

- Dual SPI: SCLK, CS#, SIO0, SIO1, WP#, HOLD#

- Data retention: 10 Years

- Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3

◆

Low Power Consumption

◆

High Speed Clock Frequency

- 40mA maximum active current

- 120MHz for fast read with 30PF load

- 110uA(1) maximum standby current

- Quad I/O Data transfer up to 480Mbits/s

◆

Enhanced access performance

◆

Software/Hardware Write Protection

- 2kbyte cache for fast random read

- Write protect all/portion of memory via software

- Cache read and cache program

- Register protection with WP# Pin

- Top or Bottom, Block selection combination

◆

Advanced Feature for NAND

- Internal ECC option, per 528bytes

◆

Advanced security Features

- Internal data move by page with ECC

- 8K-Byte OTP Region (4 page OTP)

◆

The first block(Block0) is guaranteed to be a valid block

◆

Single Power Supply Voltage

at the time of shipment.

- Full voltage range for 1.8V: 1.7V ~ 2.0V

- Full voltage range for 3.3V: 2.7V ~ 3.6V

Note: 1. When Temperature is 105℃, the maximum standby current is 200uA

GD5F2GQ4RFZIH Datasheet(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

GD5F2GQ4RFZIH Datasheet(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47

Datasheet Download

Link URL