HM3N30PR datasheet(4/10 Pages) HMSEMI

4 / 10 page

TC, CaseTemperature, C

100

125

150

Characteristics Curve：

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Rectangular Pulse Duration,Seconds

Vds , Drain-to-Source Voltage , Volts

TC , Case Temperature , C

150

100

125

0.5

1.0

1.5

2.0

2.5

V d s , D ra in -to -S o u rc e V o lta g e , V o lts

100

0 .1

100

1000

0 .01

Figure 2 Maximun Power Dissipation vs Case Temperature

Figure 5 Maximum Effective Thermal Impendance , Junction to Case

Figure 4 Typical Output Characteristics

Figure 3 Maximum Continuous Drain Current vs Case Temperature

Figure 1 Maximun Forward Bias Safe Operating Area

1 ms

100ms

OPERATION IN THIS AREA

MAY BE LIMITED BY RDS(ON)

TJ=MAX RATED

TC=25℃ Single Pulse

VGS=15V

VGS=5.5V

VGS=6.5V

VGS=6V

VGS=7V

PDM

NOTES：

DUTY FACTOR ：D=t1/ t2

PEAK Tj=PDM*ZthJC*RthJC+TC

50%

20%

10%

Single pulse

PULSE DURATION=10μs

DUTY FACTOR=0.5%MAX

Tc = 25℃

100μs

VGS=4.5V

Silicon N-Channel Power MOSFET

HM3N30PR

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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