HM3N30PR datasheet(6/10 Pages) HMSEMI

6 / 10 page

Vds , Drain - Source Voltage , Volts

10000

1000

100

0.1

100

tav,Time in Avalanche,Seconds

1.00E-03

0.1

1.00E-06 1.00E-05 1.00E-04

100

1.00E-01

1.00E-02

1.00E+00

0.2

0.4

0.6

0.8

1.2

Vsd , Source - Drain Voltage , Volts

Qg , Total Gate Charge , nC

0.9

0.95

1.05

1.1

-55

-30

-5

120 145 170

Tj, Junction temperature , C

0.65

0.7

0.75

0.8

0.85

0.9

0.95

1.05

1.1

1.15

-75 -50 -25

75 100 125 150 175

Tj, Junction temperature , C

Figure 13 Typical Capacitance vs Drain to Source Voltage

Figure 16 Unclamped Inductive Switching Capability

Figure 15 Typical Body Diode Transfer Characteristics

Figure 14 Typical Gate Charge vs Gate to Source Voltage

Ciss

Coss

Crss

VGS=0V , f=1MHz

Ciss=Cgs+Cgd

Coss=Cds+Cgd

Crss=Cgd

VDS=100V

VDS=200V

VDS=320V

+150℃

+25℃

-55℃

STARTING Tj = 25℃

STARTING Tj = 150℃

If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)

If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]

R equals total Series resistance of Drain circuit

Figure 11 Typical Theshold Voltage vs Junction Temperature

Figure 12 Typical Breakdown Voltage vs Junction Temperature

VGS=0V

ID=250μA

VGS=0V

ID=250μA

ID=2A

Silicon N-Channel Power MOSFET

HM3N30PR

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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