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ACT88430QJ-T Datasheet(PDF) 16 Page - Active-Semi, Inc |
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ACT88430QJ-T Datasheet(HTML) 16 Page - Active-Semi, Inc |
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16 / 42 page  ACT88430QJ-T Rev 1.0, 24-Oct-2018 Innovative PowerTM www.active-semi.com ActiveSwitcherTM is a trademark of Active-Semi. Copyright © 2016-2018 Active-Semi, Inc. I2CTM is a trademark of NXP 16 BUCK3 ELECTRICAL CHARACTERISTICS, REGULATORS: PARAMETER CONDITIONS MIN TYP MAX UNIT Operating Voltage Range 2.7 5.5 V Output Voltage Range Configured for 9.375mV steps 0.6 3.0 V Configured for 12.5mV steps 0.8 4.0 V Maximum Output Current 2 A Supply Current, Standby Low Power Mode Enabled Regulator Only, No Load (VOUT = VSET*1.05) 40 µA Supply Current, Shutdown Regulator Disabled 0.1 1 µA Output Voltage Accuracy – PWM Default output voltage, IOUT = 1A -1% VNOM 1% V Output Voltage Accuracy - PFM Default output voltage, IOUT = 1mA, Average Ripple Voltage -1% VNOM 1% V Line Regulation Default output voltage, VIN_B3 = 3.3V to 5.5V, PWM mode 0.02 %/V Load Regulation Default output voltage, PWM Mode 0.04 %/A Power Good Threshold VOUT_B3 Rising 92 93 94 %VNOM Power Good Hysteresis VOUT_B3 Falling 3 %VNOM Overvoltage Fault Threshold VOUT_B3 Rising 107.5 110 112.5 %VNOM Overvoltage Fault Hysteresis VOUT_B3 Falling 3 %VNOM Switching Frequency VOUT_B3 ≥ 20% of VNOM 2.15 2.25 2.36 MHz Soft-Start Period – Programmable Range Configurable in 50us Steps 10% to 90% VNOM 150 485 µs Soft-Start Period Variation from set point -25 +25 % Internal High Side Peak Current Limit (Cycle-by-Cycle) ILIMSET B3_ILIMSET=00 B3_ILIMSET=01 B3_ILIMSET=10 B3_ILIMSET=11 N/A 4.0 3.0 2.0 A Internal High Side Peak Current Limit (Cycle-by-Cycle) Tolerance At default ILIMSET -10% ILIMSET +10% At other set points -15% ILIMSET +15% Internal High Side Peak Current Limit, Shutdown Level Above ILIMSET = all settings +15% +22.5% +30% Internal High Side Peak Current Limit, IRQ Triggered Level Below ILIMSET = all settings -17.5% -25% -32.5% Internal High Side Peak Current Limit IRQ Signal Deglitch Time 16 consecutive clocks at 2.25MHz 6.78 7.11 7.44 µs PMOS On-Resistance ISW = -500mA, VIN_B3 = 3.3V 0.08 Ω NMOS On-Resistance ISW = 500mA, VIN_B3 = 3.3V 0.05 Ω SW Leakage Current – NMOS VIN_B3 = 5.5V, VSW = 5.5V 1 µA SW Leakage Current – PMOS VIN_B3 = 5.5V, VSW = 0V 1 µA Dynamic Voltage Scaling Rate B3_SLEW=00 B3_SLEW=01 B3_SLEW=10 B3_SLEW=11 Immediate 14.0 3.50 0.88 mV/µs Switching Rise / Fall Times VIN_B3 = 5V 3 / 5.5 ns (VIN_B3 = 3.3V, TA = 25°C, unless otherwise specified.) |
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