Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

KMM372F213CS Datasheet(PDF) 4 Page - Samsung semiconductor

Part # KMM372F213CS
Description  2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM372F213CS Datasheet(HTML) 4 Page - Samsung semiconductor

  KMM372F213CS Datasheet HTML 1Page - Samsung semiconductor KMM372F213CS Datasheet HTML 2Page - Samsung semiconductor KMM372F213CS Datasheet HTML 3Page - Samsung semiconductor KMM372F213CS Datasheet HTML 4Page - Samsung semiconductor KMM372F213CS Datasheet HTML 5Page - Samsung semiconductor KMM372F213CS Datasheet HTML 6Page - Samsung semiconductor KMM372F213CS Datasheet HTML 7Page - Samsung semiconductor KMM372F213CS Datasheet HTML 8Page - Samsung semiconductor KMM372F213CS Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 20 page
background image
DRAM MODULE
KMM372F213CK/CS
CAPACITANCE (TA = 25
°C, Vcc=3.3V, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0-A10, B0]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0, RAS2]
Input capacitance[CAS0, CAS4]
Input/Output capacitance[DQ0 - 71]
CIN1
CIN2
CIN3
CIN4
CDQ1
-
-
-
-
-
20
20
45
20
20
pF
pF
pF
pF
pF
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.)
Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
84
104
ns
Read-modify-write cycle time
tRWC
131
155
ns
Access time from RAS
tRAC
50
60
ns
3,4,10
Access time from CAS
tCAC
18
20
ns
3,4,5,14
Access time from column address
tAA
30
35
ns
3,10,14
CAS to output in Low-Z
tCLZ
8
8
ns
3,14
OE to output in Low-Z
tOLZ
8
8
ns
3,14
Output buffer turn-off delay from CAS
tCEZ
8
18
8
20
ns
6,11,12,14
Transition time(rise and fall)
tT
2
50
2
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
18
20
ns
14
CAS hold time
tCSH
36
43
ns
14
CAS pulse width
tCAS
8
10K
10
10K
ns
13
RAS to CAS delay time
tRCD
18
32
18
40
ns
4,14
RAS to column address delay time
tRAD
13
20
13
25
ns
10,14
CAS to RAS precharge time
tCRP
10
10
ns
14
Row address set-up time
tASR
5
5
ns
14
Row address hold time
tRAH
8
8
ns
14
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
8
10
ns
Column address to RAS lead time
tRAL
30
35
ns
14
Read command set-up time
tRCS
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
ns
8
Read command hold time referenced to RAS
tRRH
-2
-2
ns
8,14
Write command hold time
tWCH
10
10
ns
Write command pulse width
tWP
10
10
ns
Write command to RAS lead time
tRWL
18
20
ns
14
Write command to CAS lead time
tCWL
8
10
ns
Data set-up time
tDS
-2
-2
ns
9,14
Data hold time
tDH
13
15
ns
9,14
Refresh period(2K Ref.)
tREF
32
32
ms
Write command set-up time
tWCS
0
0
ns
7
CAS to W delay time
tCWD
36
40
ns
7
RAS to W delay time
tRWD
71
83
ns
7,14



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com