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SSM3K35AFS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM3K35AFS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 9 page  SSM3K35AFS 1 MOSFETs Silicon N-Channel MOS SSM3K35AFS SSM3K35AFS SSM3K35AFS SSM3K35AFS Start of commercial production 2016-10 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching • Analog Switches 2. 2. 2. 2. Features Features Features Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. 3. 3. 3. Packaging and Pin Assignment Packaging and Pin Assignment Packaging and Pin Assignment Packaging and Pin Assignment SSM 1: Gate 2: Source 3: Drain 2017-02-17 Rev.3.0 ©2016 Toshiba Corporation |
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